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| BAR67-03W Silicon PIN Diode 2 Low loss RF switch RF attenuator Low series capacitance and resistance 1 VPS05176 Type BAR67-03W Maximum Ratings Parameter Diode reverse voltage Forward current Marking Blue T Pin Configuration 1=C 2=A Package SOD323 Symbol VR IF Top Tstg Value 150 200 -55 ... 150 -55 ... 150 Unit V mA C Operating temperature range Storage temperature Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) 130 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-09-2001 BAR67-03W Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I(BR) = 5 A Reverse current VR = 100 V Forward voltage IF = 50 mA AC Characteristics Diode capacitance VR = 35 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance IF = 5 mA, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Charge carrier life time gp 220 0.7 1.8 rf CT 0.4 0.35 1.5 0.6 0.9 1.8 Unit max. 20 1.2 V nA V typ. 0.95 V(BR) IR VF 150 - pF rr Ls 2 Jul-09-2001 S s nH BAR67-03W Forward current IF = f (VF ) TA = 25C 10 3 mA 10 2 IF 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF Diode capacitance CT = f (VR) f = 1MHz Forward resistance rf = f(IF ) f = 100MHz 10 3 Ohm 0.8 pF 0.6 10 2 CT 0.5 1MHz rf 10 1 100MHz 0.4 0.3 0.2 10 0 0.1 10 -1 -3 10 0 0 5 10 15 20 25 V 35 10 -2 10 -1 10 0 10 1 mA 10 3 VR IF 3 Jul-09-2001 |
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